| PART |
Description |
Maker |
| DS1230 DS1230W DS1230WP-150-IND 1230W DS1230W-100 |
3.3V 256k Nonvolatile SRAM
3.3V 256K Nonovolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
|
| DS2030Y-100 DS2030AB-70 DS2030Y-70 DS2030AB-100 |
100 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM
70 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM
70 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM
100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| DS1330WP-100IND DS1330WP-150 |
3.3V 256k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
| DS2030W |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim
|
| DS1330YL DS1330BL-100 DS1330BL-100-IND DS1330BL-70 |
256K Nonvolatile SRAM with Battery Monitor
|
http://
Dallas Semiconductor
Dallas Semiconducotr
|
| DS1330Y10 |
256k Nonvolatile SRAM with Battery Monitor
|
Dallas Semiconductor
|
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44
From old datasheet system
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS7C33256FT18B AS7C33256FT18BV.1.4 AS7C33256FT18B- |
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 10 ns, PQFP100
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 6.5 ns, PQFP100
Sync SRAM - 3.3V
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
